Hiksemi Future 512GB Gen4 M.2 NVMe 3D NAND SSD

Features • 512GB capacity • M.2 • 900 TBW endurance Specifications • Capacity: 512GB • Form Factor: M.2 2280 • Max. Seq. Read: 7050MB/s • Max. Seq. Write: 4200MB/s • Max. Ran 4 K Read (IOPS): 710K • Max. Ran 4 K Write (IOPS): 640K • Max. Power Consumption: 3.66W • TBW: 900TB • MTBF: 2,000,000 hours • Storage Medium: 3D TLC • Interface: PCIe Gen4x4 • Working Temperature: 0 °C ~ 70 °C • Storage Temperature: -40 °C ~ 85 °C • Function: AES-256/SM4/TCG-Opal 2.0/IEEE1667; Third-generation Agile ECC technology (4K LDPC), end-to-end data protection; RAID5 & 6 • Warranty: 5 years • Product Weight: ≤7 g What's in the Box • Hiksemi Future 512GB Gen4 M.2 NVMe 3D NAND SSD x1